Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods | ACS Applied Materials & Interfaces
Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO | Scientific Reports
Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties | Materials Research Society Internet Journal of Nitride Semiconductor Research | Cambridge Core
Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME) - ScienceDirect
High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires. - Abstract - Europe PMC
Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes<xref ref-type="fn" rid="cpb150161fn1">*</xref>
Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates - Nanoscale (RSC Publishing)
Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes: Journal of Vacuum Science & Technology B: Vol 31, No 3
PDF) Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode | Aliaksei Vainilovich - Academia.edu
Crystals | Free Full-Text | Progress of InGaN-Based Red Micro-Light Emitting Diodes
Optical Confinement Study of Laser MBE Grown InGaN/GaN Quantum Well Structure using Surface Plasmon Resonance Technique | SpringerLink
Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE
High-quality InN films on GaN using graded InGaN buffers by MBE
IBPOWER Kick off meeting – 07/02/08 Specific issues relating to plasma-MBE Growth under group III-rich versus group V-rich conditions Control of composition. - ppt download
Micromachines | Free Full-Text | Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE - ScienceDirect
Nanomaterials | Free Full-Text | InGaN Nanorods Decorated with Au Nanoparticles for Enhanced Water Splitting Based on Surface Plasmon Resonance Effects
PL spectra as a function of sample temperature for an InGaN sample... | Download Scientific Diagram
Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy: Journal of Vacuum Science & Technology B: Vol 32, No 2
PDF) Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE | Ph. Komninou - Academia.edu
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer | Scientific Reports
N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs
Low-temperature growth of InGaN films over the entire composition range by MBE - ScienceDirect
Full-Color InGaN/AlGaN Nanowire Light-Emitting Diodes for SSL and Displays — LED professional - LED Lighting Technology, Application Magazine
InGaN multiple quantum well (QW) laser diode structure as grown on... | Download Scientific Diagram
Tunneling to green light emission with improved efficiency performance
InGaN Nanowires Make Light Mixing Efficient and Smart — LED professional - LED Lighting Technology, Application Magazine
