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Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry | Scientific.Net
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Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide | Scientific Reports
Net recombination in the GaAs layer of the LED, net generation in the... | Download Scientific Diagram