High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires. - Abstract - Europe PMC
Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers | Scientific Reports
Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO | Scientific Reports
PAM-XIAMEN Offers InGaN Substrates_News_Compound semiconductor wafer
Nanomaterials | Free Full-Text | InGaN Nanorods Decorated with Au Nanoparticles for Enhanced Water Splitting Based on Surface Plasmon Resonance Effects
Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME) - ScienceDirect
a) Time-integrated PL of highly excited MBE-grown InGaN/InGaN MQWs at... | Download Scientific Diagram
Asymmetric reciprocal space maps of GaN and InGaN (10.5) reflections... | Download Scientific Diagram
Tunneling to green light emission with improved efficiency performance
Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes: Journal of Vacuum Science & Technology B: Vol 31, No 3
Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE - ScienceDirect
InGaN Nanowires Make Light Mixing Efficient and Smart — LED professional - LED Lighting Technology, Application Magazine
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer | Scientific Reports
Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties | Materials Research Society Internet Journal of Nitride Semiconductor Research | Cambridge Core
High-quality InN films on GaN using graded InGaN buffers by MBE
PDF) Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE | Ph. Komninou - Academia.edu
Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE
Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates - Nanoscale (RSC Publishing)
IBPOWER Kick off meeting – 07/02/08 Specific issues relating to plasma-MBE Growth under group III-rich versus group V-rich conditions Control of composition. - ppt download
Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades - Hestroffer - 2016 - physica status solidi (b) - Wiley Online Library
Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes<xref ref-type="fn" rid="cpb150161fn1">*</xref>
PDF) Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode | Aliaksei Vainilovich - Academia.edu
Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE - ScienceDirect
a) Time-integrated PL of highly excited MBE-grown InGaN/InGaN MQWs at... | Download Scientific Diagram
Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires | Scientific Reports
Crystals | Free Full-Text | Progress of InGaN-Based Red Micro-Light Emitting Diodes
